Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies

Tsai, Chung EnChung EnTsaiCheng, Chun YiChun YiChengHuang, Bo WeiBo WeiHuangLin, Hsin ChengHsin ChengLinChou, TaoTaoChouTu, Chien TeChien TeTuLiu, Yi ChunYi ChunLiuJan, Sun RongSun RongJanChen, Yu RuiYu RuiChenHsieh, Wan HsuanWan HsuanHsiehChiu, Kung YingKung YingChiuChueh, Shee JierShee JierChuehCHEE-WEE LIU2023-05-222023-05-222022-01-01978166549772507431562https://scholars.lib.ntu.edu.tw/handle/123456789/631216Ultrathin body exhibits excellent immunity to subthreshold swing (SS) degradation by doping and Dit, approaching the ideal SS of 60mV/dec. Highly stacked Ge0.9Sn0.1 ultrathin bodies down to 2nm are fabricated to achieve record low SS of 64mV/dec and record high ION/IOFF of 1.6x107 among GeSn pGAAFETs. Superior inter-channel uniformity and good crystallinity of the 8 stacked Ge0.9Sn0.1 ultrathin bodies are demonstrated by the co-optimization of CVD epitaxy (50 layers) and highly selective isotropic dry etching with low thermal budget (=400). Moreover, the improvement of total gate capacitance and intrinsic gate delay using the ultrathin body is confirmed by TCAD due to the reduced stack height.Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodiesconference paper10.1109/VLSITechnologyandCir46769.2022.98303572-s2.0-85135243031https://api.elsevier.com/content/abstract/scopus_id/85135243031