Dept. of Electr. Eng., National Taiwan Univ.Lien, Chun-HsienChun-HsienLienDeng, Kuo-LiangKuo-LiangDengLiu, Chieh-ChaoChieh-ChaoLiuChou, Hua-ShanHua-ShanChouHUEI WANG2007-04-192018-07-062007-04-192018-07-062000-12https://www.scopus.com/inward/record.uri?eid=2-s2.0-0033344188&partnerID=40&md5=20d95775c530446ef6bf4705e53b5014This paper presents the development of a one-stage and a two-stage Ka-band monolithic LNA for commercial wireless communication applications. The monolithic microwave/millimeter-wave integrated circuits (MMICs) are fabricated with a 0.2-μm pseudomorphic (PM) GaAs-based HEMT technology, carried out by commercially available foundry. The one-stage amplifier demonstrated a measured small signal gain of 9.5 dB with a noise figure (NF) of 2.7 dB at 28 GHz, while the two-stage amplifier has a measured gain of 17 dB with 3.3 dB NF at 28 GHz. Due to fabrication with the commercial foundry process, these MMICs have the potential for mass production.application/pdf146452 bytesapplication/pdfen-US[SDGs]SDG7High electron mobility transistors; Monolithic microwave integrated circuits; Semiconducting gallium arsenide; Wireless telecommunication systems; Low noise amplifiers (LNA); Microwave amplifiersjournal article10.1109/APMC.2000.9260392-s2.0-0033344188http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021401/1/00926039.pdf