Hung, J.J.HungWang, P.P.WangLo, Y.Y.LoYang, C.C.YangTsui, B.B.TsuiCHIA-HSIANG YANG2021-02-262021-02-262020https://www.scopus.com/inward/record.url?eid=2-s2.0-85096017691&partnerID=40&md5=2205d707ca5630c679de4341b412f173https://scholars.lib.ntu.edu.tw/handle/123456789/549866The tunnel field-effect transistor (TFET) is a promising solution for high energy-efficient circuits. Based on the band-to-band tunneling (BTBT) condition, fast switching characteristic with a steep subthreshold swing (SS) in the ultralow-voltage operation is feasible. Our prior work has demonstrated that the SS and ON-state current can be improved without leakage current penalty through the usage of SiGe low-bandgap material in the epitaxial tunnel layer (ETL). ETL-TFET is highly compatible with the CMOS process, enabling heterogeneous integration of TFET and MOSFET in the same technology. In this work, the circuit performance of ETL-TFET and fully depleted SOI (FDSOI) MOSFET is evaluated and compared in terms of energy and delay metrics. By combining the advantages of TFET and MOSFET, heterogeneous pMOS-NTFET dynamic logic gates are proposed. The pMOS-NTFET-based logic gates demonstrate the lowest energy consumption than other realizations. Asynchronous datapath is leveraged to combat the timing variations in the ultralow-voltage region. A 20.9%-33.9% energy reduction is achieved compared with the conventional MOSFET counterpart. © 2014 IEEE.Band-to-band (BTBT) tunneling; epitaxial tunnel layer (ETL) tunnel field-effect transistor (TFET); heterogeneous integration; low-energy logic; SiGe low-bandgap material[SDGs]SDG7Computer circuits; Delay circuits; Drain current; Electric network analysis; Energy efficiency; Energy gap; Energy utilization; Logic gates; Si-Ge alloys; Silicon on insulator technology; Tunnel field effect transistors; Band to band tunneling; Circuit application; Circuit performance; Fully depleted SOI; Heterogeneous integration; Steep subthreshold swings; Timing variations; Tunnel field-effect transistors (TFET); MOSFET devicesjournal article10.1109/JXCDC.2020.30329032-s2.0-85096017691