T. S. LayW. T. KuoL. P. ChenY. H. LaiH. HungJ. S. WangJ. Y. ChiD. K. ShihHAO-HSIUNG LIN2018-09-102018-09-102004-06https://www.scopus.com/inward/record.uri?eid=2-s2.0-3242688049&doi=10.1116%2f1.1735802&partnerID=40&md5=97cdb182694b1fad77b71a110629d6baBinding energy; Chemical bonds; Heterojunctions; Metallorganic chemical vapor deposition; Molecular beam epitaxy; Semiconducting gallium arsenide; Semiconducting indium gallium arsenide; Sputtering; Synchrotron radiation; Synchrotrons; X ray photoelectron spectroscopy; Bonding configurations; Electronegativity; Short range orders (SRO); Vertical cavity surface emitting lasers (VCSEL); NitridesProbing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopyjournal article10.1116/1.17358022-s2.0-3242688049WOS:000222481400123