3510-V 390-mΩ · cm2 4H-SiC lateral JFET on a semi-insulating substrate

Huang, C.-F.C.-F.HuangKan, C.-L.C.-L.KanWu, T.-L.T.-L.WuLee, M.-G.M.-G.LeeLiu, Y.-Z.Y.-Z.LiuLee, K.-Y.K.-Y.LeeZhao, F.F.ZhaoKUNG-YEN LEE2018-09-102018-09-102009http://www.scopus.com/inward/record.url?eid=2-s2.0-69949156070&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/346476[SDGs]SDG73510-V 390-mΩ · cm2 4H-SiC lateral JFET on a semi-insulating substratejournal article10.1109/LED.2009.2027722