Huang, C. H.C. H.HuangJENN-GWO HWUJIA-YUSH YEN2020-01-132020-01-1320020021-4922https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036317703&doi=10.1143%2fJJAP.41.81&partnerID=40&md5=5449612cd42f5415749463dbfbc09664The characteristics of silicon thermal oxides grown on silicon wafers under mechanical stress were discussed. It was found that the etch rate of SiO2 films grown under compressive stress was decreased. The capacitance-voltage (C-V) measurements showed that the interface state density of tensile sample was decreased and that of compressive sample was increased.Interface state density; Mechanical stress; Oxides[SDGs]SDG7Capacitance; Compressive stress; Electric potential; Etching; Interfaces (materials); Semiconducting films; Semiconductor growth; Silicon wafers; Tensile properties; Mechanical stress; Semiconducting silicon compoundsjournal article10.1143/JJAP.41.812-s2.0-0036317703WOS:000173882300019