Lee, I-TingI-TingLeeTsai, Kun-HungKun-HungTsaiSHEN-IUAN LIU2011-10-072018-07-102011-10-072018-07-10200915497747http://scholars.lib.ntu.edu.tw/handle/123456789/352072http://ntur.lib.ntu.edu.tw/bitstream/246246/237196/-1/10.pdfhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-68249162461&doi=10.1109%2fTCSII.2009.2023280&partnerID=40&md5=8996bb0fa59e96c1b634d38259a92933A high-frequency CMOS injection-locked frequency divider (ILFD) is presented by using the distributed LC, series inductor peaking, and multiple-injection techniques. The theoretical analysis for the aforementioned techniques will be given. This ILFD has been fabricated in a 65-nm CMOS process. The core area is 0.4 mm × 0.36 mm without pads. The measured locking range is from 104 to 112.8 GHz, and its power consumption is 7.2 mW from a supply of 1.2 V. © 2009 IEEE.Distributed LC; Injection-locked frequency divider; Series inductor peakingCMOS integrated circuits; CMOS processs; Distributed LC; High frequency HF; Injection locked frequency divider; Injection Locked Frequency Divider(ILFD); Locking range; Multiple injections; Series inductor; Frequency dividing circuitsjournal article10.1109/TCSII.2009.20232802-s2.0-68249162461http://ntur.lib.ntu.edu.tw/bitstream/246246/237196/-1/10.pdf