Tseng PChen J.-WHsueh W.-J.WEN-JENG HSUEH2021-08-052021-08-05202120452322https://www.scopus.com/inward/record.uri?eid=2-s2.0-85107117013&doi=10.1038%2fs41598-021-91242-y&partnerID=40&md5=30fb00c0c06b88aa92425d913aaa7648https://scholars.lib.ntu.edu.tw/handle/123456789/576864Topological insulators (TI) have extremely high potential in spintronic applications. Here, a topological insulators thin-film (TITF) spin valve with the use of the segment gate-controlled potential exhibits a huge magnetoresistance (MR) value higher than 1000% at room temperature which is more than 50 times the MR of typical topological insulators (TI) spin-valves. A high spin-polarized current is provided by the band structure generated by the tunable segment potential. The results reveal a very large resistance difference between the parallel and antiparallel configurations. The MR effect is strongly influenced by the thin-film thickness, the gate potential, the gate size, and the distribution. The proposed results will help to not only improve the room-temperature performance of the spin-valves but also enhance the applications of magnetic memories and spintronic devices. ? 2021, The Author(s).[SDGs]SDG7journal article10.1038/s41598-021-91242-y340836542-s2.0-85107117013