In0.18Al0.82N/AlN/GaN HEMT on Si with Hybrid Ohmic and Schottky Source/Drain Solid State Electronics

M. H.LiaoP.-G. ChenM. TangM. H. Lee2019-03-112019-03-112017https://scholars.lib.ntu.edu.tw/handle/123456789/404529In0.18Al0.82N/AlN/GaN HEMT on Si with Hybrid Ohmic and Schottky Source/Drain Solid State Electronicsjournal article