10-gb/s operation of an In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate

Liao, Yu-ShengYu-ShengLiaoLin, Gong-RuGong-RuLinKuo, Hao-ChungHao-ChungKuoFeng, Kai-MingKai-MingFengFeng, MiltonMiltonFeng2009-03-252018-07-062009-03-252018-07-062006http://ntur.lib.ntu.edu.tw//handle/246246/147998application/pdf314254 bytesapplication/pdfen-US10-gb/s operation of an In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substratejournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/147998/1/02.pdf