Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect

H. J. HungJ. B. KuoD. ChenC. S. YehJAMES-B KUO2018-09-102018-09-102010-05http://scholars.lib.ntu.edu.tw/handle/123456789/359228Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effectjournal article10.1016/j.microrel.2010.01.0152-s2.0-77953133970WOS:000278728700007