Syu H.-JSu Z.-CSun R.-LLai H.-HCHING-FUH LIN2022-04-252022-04-252021https://www.scopus.com/inward/record.uri?eid=2-s2.0-85115434606&doi=10.1109%2fRAPID51799.2021.9521452&partnerID=40&md5=09695bf9c9d86829b734a97fc21fa263https://scholars.lib.ntu.edu.tw/handle/123456789/607033Here, inverted-pyramid array structures (IPAS) are applied on NiSi/n-Si Schottky photodetectors to generate surface plasmon resonance and improve the photoresponse in mid-infrared region. Consequently, compared with the planar devices, the current response of 8-μm-period IPAS devices increases 4.08 times in 3.2-μm light illumination. ? 2021 IEEE.Inverted pyramid arraysMid-infraredNiSiSchottkySurface plasmon resonanceInfrared detectorsNickel compoundsPhotonsSilicon compoundsArray structuresInverted pyramid arrayLocalized surface plasmon resonanceMid-infrared regionsMidinfraredPhotoresponsesPyramid arraysSchottky photodetectorsSurface-plasmon resonanceconference paper10.1109/RAPID51799.2021.95214522-s2.0-85115434606