Interfacial perfection for pushing InGaAs and Ge MOS device limits (invited)

MINGHWEI HONGLin, Y.H.Y.H.LinWan, H.W.H.W.WanChen, W.S.W.S.ChenCheng, Y.T.Y.T.ChengCheng, C.P.C.P.ChengPi, T.W.T.W.PiKwo, J.J.Kwo2019-12-272019-12-272018https://scholars.lib.ntu.edu.tw/handle/123456789/443295Interfacial perfection for pushing InGaAs and Ge MOS device limits (invited)conference paper10.1109/ICSICT.2018.85649622-s2.0-85060293706https://www.scopus.com/inward/record.uri?eid=2-s2.0-85060293706&doi=10.1109%2fICSICT.2018.8564962&partnerID=40&md5=f3597ac68ac0c6bb54ef2ae03dd560d1