MIIN-JANG CHENCHING-FUH LINLiu, W. T.W. T.LiuChang, S. T.S. T.ChangCHEE-WEE LIU2009-03-182018-07-062009-03-182018-07-06200100218979http://ntur.lib.ntu.edu.tw//handle/246246/145926https://www.scopus.com/inward/record.uri?eid=2-s2.0-0009406424&doi=10.1063%2f1.1331647&partnerID=40&md5=1e36e8a88ff30a551337e4878392e532Characteristics of electroluminescence from indium tin oxide (ITO)/SiO 2/Si metal-oxide-semiconductor (MOS) structures fabricated on both p-type and n-type Si wafers were investigated. The ITO/SiO 2/Si MOS on p-type Si could have both the visible and band edge electroluminescence, while the ITO/SiO 2/Si MOS on n-type Si has only band edge emission. The reason for the difference is attributed to the impact ionization that only occurs for ITO/SiO 2/Si(p) MOS. The study indicates that the band edge emission and visible luminescence are competing processes. The electroluminescence from ITO/SiO 2/Si(n) is also discovered to be less than that from the Al/SiO 2/Si(n). The reason is possibly due to the damage of the oxide bonding and the SiO 2/Si interface during the ITO sputtering. © 2001 American Institute of Physics.application/pdf68970 bytesapplication/pdfen-USjournal article10.1063/1.13316472-s2.0-0009406424http://ntur.lib.ntu.edu.tw/bitstream/246246/145926/1/34.pdf