MING-HAN LIAOCHEE-WEE LIU2021-08-052021-08-052017https://www.scopus.com/inward/record.uri?eid=2-s2.0-85023175409&doi=10.1109%2fVLSI-TSA.2017.7942466&partnerID=40&md5=8c476c78edb94d260bc1edde3afa8dd4https://scholars.lib.ntu.edu.tw/handle/123456789/576189Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800°C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect. ? 2017 IEEE.Ferroelectricity; FinFET; Hafnium; VLSI circuits; Hysteresis free; Negative capacitance; Negative capacitance effect; Physical thickness; Sub-threshold swing(ss); Capacitance[SDGs]SDG7conference paper10.1109/VLSI-TSA.2017.79424662-s2.0-85023175409