Small- and large-signal operation of X-band CE and CB SiGe/Si power HBT's

Rieh Jae-SungLIANG-HUNG LUMa ZhenqiangLiu XuefengKatehi P.BBhattacharya Pallab2018-09-102018-09-101999-060149645Xhttp://scholars.lib.ntu.edu.tw/handle/123456789/352484https://www.scopus.com/inward/record.uri?eid=2-s2.0-0033360057&partnerID=40&md5=4624f3111efd243888298567aeacfc74Common-emitter(CE) and common-base(CB) multifinger SiGe/Si power heterojunction bipolar transistors (HBTs) for X-band operation are reported for the first time. 10-finger CB and CE device show fmax of 28 GHz and 20 GHz, maximum PAE of 34.9% and 17.5%, and Pout at 1 dB gain compression point of 15.6 dBm and 17.5 dBm, respectively, in class A operation at 8 GHz for CW mode.[SDGs]SDG7Multifinger devices; X-band operation; Electric potential; Fabrication; Gain measurement; Molecular beam epitaxy; Semiconducting silicon; Heterojunction bipolar transistorsSmall- and large-signal operation of X-band CE and CB SiGe/Si power HBT'sconference paper10.1109/mwsym.1999.7796002-s2.0-0033360057