Strain relaxation in InGaN/GaN multiple-quantum wells by nano-patterned sapphire substrates with smaller period

CHIEH-HSIUNG KUANChen, P.-H.P.-H.ChenSu, V.-C.V.-C.SuLee, M.-L.M.-L.LeeYou, Y.-H.Y.-H.YouChen, Y.-P.Y.-P.ChenHung, Z.-H.Z.-H.HungHsu, T.-C.T.-C.HsuLin, Y.-Y.Y.-Y.LinLin, R.-M.R.-M.LinCHIEH-HSIUNG KUAN2018-09-102018-09-102015http://www.scopus.com/inward/record.url?eid=2-s2.0-84935061165&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/392935Strain relaxation in InGaN/GaN multiple-quantum wells by nano-patterned sapphire substrates with smaller periodconference paper10.1364/CLEO_AT.2015.JTh2A.31