Non-Volatile Ferroelectric FETs Using 5-nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> with High Data Retention and Read Endurance for 1T Memory Applications

Chen, K.-T.K.-T.ChenChen, H.-Y.H.-Y.ChenLiao, C.-Y.C.-Y.LiaoSiang, G.-Y.G.-Y.SiangLo, C.C.LoLiao, M.-H.M.-H.LiaoLi, K.-S.K.-S.LiChang, S.T.S.T.ChangLee, M.H.M.H.LeeMING-HAN LIAO2020-01-132020-01-132019https://scholars.lib.ntu.edu.tw/handle/123456789/447942Non-Volatile Ferroelectric FETs Using 5-nm Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> with High Data Retention and Read Endurance for 1T Memory Applicationsjournal article10.1109/LED.2019.28962312-s2.0-85062685099https://www.scopus.com/inward/record.uri?eid=2-s2.0-85062685099&doi=10.1109%2fLED.2019.2896231&partnerID=40&md5=cd3121763fa390cb90a8bb0afba84c75