Asymmetric keep-out zone of through-silicon via using 28-nm technology node

CHEE-WEE LIUYan, J.-Y.J.-Y.YanJan, S.-R.S.-R.JanHuang, Y.-C.Y.-C.HuangLan, H.-S.H.-S.LanHuang, Y.-H.Y.-H.HuangHung, B.B.HungChan, K.-T.K.-T.ChanHuang, M.M.HuangYang, M.-T.M.-T.YangCHEE-WEE LIU2018-09-102018-09-102015http://www.scopus.com/inward/record.url?eid=2-s2.0-84940387978&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/393214Asymmetric keep-out zone of through-silicon via using 28-nm technology nodejournal article10.1109/LED.2015.2456179