Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on p-type Si substrates

CHI-TE LIANG2018-09-102018-09-102006http://www.scopus.com/inward/record.url?eid=2-s2.0-33749260490&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/322878Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on p-type Si substratesjournal article10.1063/1.23570052-s2.0-33749260490WOS:000240875800064