Effect of Al incorporation in the thermal stability of atomic-layer-deposited HfO<inf>2</inf> for gate dielectric applications

Chiou, Y.-K.Y.-K.ChiouChang, C.-H.C.-H.ChangWang, C.-C.C.-C.WangLee, K.-Y.K.-Y.LeeWu, T.-B.T.-B.WuKwo, R.R.KwoMINGHWEI HONG2019-12-272019-12-272007https://scholars.lib.ntu.edu.tw/handle/123456789/443447Effect of Al incorporation in the thermal stability of atomic-layer-deposited HfO<inf>2</inf> for gate dielectric applicationsjournal article10.1149/1.24725622-s2.0-33947173848https://www.scopus.com/inward/record.uri?eid=2-s2.0-33947173848&doi=10.1149%2f1.2472562&partnerID=40&md5=030ac9e7b06536b84dca253badcbb573