Hsieh, C.-F.C.-F.HsiehChen, C.-W.C.-W.ChenChen, C.-H.C.-H.ChenLiao, M.-H.M.-H.Liao2019-03-112019-03-112014https://scholars.lib.ntu.edu.tw/handle/123456789/404494Positron Annihilation Spectra (PAS), Raman, and photoluminescence spectroscopy reveal that Sio.5Geo.5/Si interface quality can be dramatically improved through a low energy plasma cleaning process using hydrogen. In the PAS, the particularly small values of lifetime and intensity near the Sio.5Geo.5/Si interface in the treated sample indicate a 2.25 times reduction in defect concentration. Fewer defects were found in the interface, resulting in a high compressive strain of about 0.36 % in the top layer, which can be observed in Raman spectra, and a 1.39 times increase to the radiative recombination rate for the infrared emission, which can be observed in the photoluminescence spectra. Improved Sio.5Geo.5/Si interface quality leads to improved optical and electrical characteristics in SiGe-based devices in a broader range of photovoltaic applications. The PAS is also shown to be a useful metrology tool for quantifying defects in SiGe-based devices. © 2014 International Journal of Automation and Smart Technology.Defect; Low energy hydrogen plasma cleaning process; Positron annihilation spectroscopy; Sige-based devices[SDGs]SDG7journal article10.5875/ausmt.v4i1.2342-s2.0-84905678925