鄭鴻祥臺灣大學：電子工程學研究所曾高吾Tseng, Kao-WuKao-WuTseng2007-11-272018-07-102007-11-272018-07-102007http://ntur.lib.ntu.edu.tw//handle/246246/57372近年來，矽鍺/矽異質結構應用於電子元件與光電元件備受矚目。在本論文中，我們使用分子束磊晶技術來成長矽鍺合金來取代傳統矽的方式，改善太陽電池的元件效能，及討論磊晶單晶矽摻雜濃度、厚度對元件特性之影響。 最後我們用太陽能模擬器AM1.5G的照射條件下，對於太陽電池中的四個重要參數，轉換效率、短路電流、開路電壓與填充因子，來進行量測和分析，並判斷整體太陽電池之性能。In recent years, SiGe/Si heterostructure has attracted great attention for its applications in electronic devices and optoelectronic devices. In this thesis, we use the molecular beam epitaxy technology to deposit SiGe alloy on silicon substrate to substitute for the conventional silicon material and to improve the conversion efficiency of solar cells. The influence of the doping concentration and thickness of single-crystal on device characteristics are discussed. Finally, we use simulator of solar energy AM1.5G under the illuminated condition. The four important parameters are conversion efficiency, short-circuit current, open-circuit voltage and fill factor. We measure these parameters to analyze and evaluate the performance of solar cells. Four important factors will determine the overall performance of solar cell.中文摘要.........................................i 英文摘要.........................................ii 致謝.............................................iii 目錄.............................................iv 圖目錄...........................................vi 表目錄...........................................viii 第一章 緒論....................................1 1.1 簡介......................................1 1.2 研究動機..................................2 1.3 矽、鍺材料性質特性........................4 1.4 相關研究..................................9 1.5 論文架構..................................11 參考文獻......................................12 第二章 理論與原理..............................13 2.1 太陽光譜..................................13 2.2 太陽電池之原理............................17 2.3 矽鍺異質結構在太陽電池之應用..............22 2.4 太陽電池轉換效率之損失....................25 參考文獻......................................26 第三章 樣品結構與元件製程........................27 3.1 樣品介紹..................................27 3.2 分子束磊晶................................29 3.2.1 磊晶成長模式.........................31 3.2.2 分子束磊晶系統.......................33 3.3 元件製程..................................36 參考文獻......................................42 第四章 實驗方法與實驗討論......................43 4.1 量測實驗儀器設備與架構....................43 4.1.1 紫外光/可見光/近紅外光光譜儀.........43 4.1.2 太陽電池量測系統…...................44 4.2 實驗結果..................................46 4.3 分析與討論................................55 4.3.1 紫外光/可見光/近紅外光光譜分析.......55 4.3.2 電流-電壓特性分析....................57 第五章 結論與未來展望............................59en-US矽鍺太陽電池矽鍺異質接面光電元件SiSiGesolar cellHeterojunctionOptoelectronic devicethesis