Bipolar-FET Combinational Power Transistors for Power Conversion Applications

DAN CHENS. Chin2018-09-102018-09-101984-09http://scholars.lib.ntu.edu.tw/handle/123456789/310681https://www.scopus.com/inward/record.uri?eid=2-s2.0-0021494892&doi=10.1109%2fTAES.1984.310534&partnerID=40&md5=23d79a9303c5ca65c889cef56ef7f33fFour bipolar-FET (field-effect transistor) combinational transistor configurations are compared from the application point of view. The configurations included are FET-Darlington (cascade), emitter-open switch (cascode), parallel configuration, and FET-gated bipolar transistors (FGT). © 1984 IEEEELECTRIC CONVERTERS, STATIC; TRANSISTORS, BIPOLAR; BIPOLAR-FET COMBINATIONAL POWER TRANSISTORS; CASCADE CONFIGURATION; CASCODE CONFIGURATION; POWER CONVERSION APPLICATIONS; TRANSISTORS, FIELD EFFECT[SDGs]SDG7Bipolar-FET Combinational Power Transistors for Power Conversion Applicationsjournal article10.1109/TAES.1984.3105342-s2.0-0021494892WOS:A1984TN96300017