The Fringing Electric Field Effect on the Short-Channel Effect Threshold Voltage of FD SOI NMOS Devices with LDD/Sidewall Oxide Spacer Structure

J. B. KuoS. C. LinJAMES-B KUO2018-09-102018-09-102002-06http://scholars.lib.ntu.edu.tw/handle/123456789/299089[SDGs]SDG6The Fringing Electric Field Effect on the Short-Channel Effect Threshold Voltage of FD SOI NMOS Devices with LDD/Sidewall Oxide Spacer Structureconference paper10.1109/hkedm.2002.10291442-s2.0-84948778809