Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes

MINGHWEI HONGAnselm, KAKAAnselmKwo, JJKwoNg, HMHMNgBaillargeon, JNJNBaillargeonKortan, ARARKortanMannaerts, JPJPMannaertsCho, AYAYChoLee, CMCMLeeChyi, JIJIChyiothers2018-09-102018-09-102000http://scholars.lib.ntu.edu.tw/handle/123456789/289573Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodesjournal article