N-channel SnOx thin-film transistors via oxidation effect from Al2O3 capping layer for complementary inverters

H.-L. YangY.-S. LiY.-A. ShihS.-M. HsuI-C. ChengI-CHUN CHENG2019-10-312019-10-312016https://scholars.lib.ntu.edu.tw/handle/123456789/429499N-channel SnOx thin-film transistors via oxidation effect from Al2O3 capping layer for complementary invertersconference paper