Dept. of Electr. Eng., National Taiwan Univ.Chen, Po-YoPo-YoChenTang, Yu-LungYu-LungTangWang, Yu-ChiYu-ChiWangChao, Pane-ChanePane-ChaneChaoHUEI WANG2007-04-192018-07-062007-04-192018-07-062002-08https://www.scopus.com/inward/record.uri?eid=2-s2.0-84966393527&doi=10.1109%2fAPASIC.2002.1031532&partnerID=40&md5=7324110afd679bb03efe3b9feef84dfbThis paper reports the development of a Q-band (33-50 GHz) triple-push VCO using GaAs heterojunction bipolar transistor (HBT) MMIC technology. The circuit adopts cascode configuration of HBTs in order to increase the negative resistance at high frequency and thus to obtain a higher oscillation frequency. Based on the measured results, MMIC VCO achieves a tuning frequency range of 39 to 46 GHz. © 2002 IEEE.application/pdf297839 bytesapplication/pdfen-US[SDGs]SDG7Analog circuits; Cascode amplifiers; Heterojunction bipolar transistors; Heterojunctions; Variable frequency oscillators; Cascode configuration; Gaas heterojunction bipolar transistors; High frequency HF; Measured results; MMIC technology; Oscillation frequency; Triple-push; Tuning frequency; Monolithic microwave integrated circuitsjournal article10.1109/APASIC.2002.10315322-s2.0-84966393527http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021116/1/01031532.pdf