國立臺灣大學電機工程學系Yeh, K.Y.K.Y.YehLu, S.S.S.S.LuLin, Y.S.Y.S.Lin2006-09-272018-07-062006-09-272018-07-062004-11http://ntur.lib.ntu.edu.tw//handle/246246/20060927122737679250A very low power consumption (6 mW) 5 GHz band receiver frontend using InGaP-GaAs HBT technology is reported. The receiver front-end is composed of a cascode low noise amplifier followed by a double-balanced mixer with the RF transconductor stage placed above the Gilbert quad for direct-coupled connection. The RF band of this receiver front-end is set to be 5.2 GHz, being downconverted to 1 GHz IF frequency. Input-return-loss (S11) in RF port smaller than 12 dB and excellent power-conversion-gain of 35.4 dB are achieved. Input 1 dB compression point (P1dB) and input third-order intercept point (IIP3) of 24 and 3 dBm, respectively, are also achieved.application/pdf277233 bytesapplication/pdfzh-TWthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/20060927122737679250/1/01363665.pdf