Low-Voltage Content Addressable Memory Cell with a Fast Tag-Compare Capability Using Partially-Depleted SOI CMOS Dynamic-Threshold Techniques

J. B. KuoS. C. LiuJAMES-B KUO2018-09-102018-09-102001-05http://scholars.lib.ntu.edu.tw/handle/123456789/294331Low-Voltage Content Addressable Memory Cell with a Fast Tag-Compare Capability Using Partially-Depleted SOI CMOS Dynamic-Threshold Techniquespatent