Reduction of threading dislocation by using pattern sapphire substrate on GaN to enhance Schottky diodeˇ¦s performance

Cheng, W.-I.W.-I.ChengChien, C.-Y.C.-Y.ChienKung, B.-H.B.-H.KungCheng-Wei, Y.Y.Cheng-WeiCHIEH-HSIUNG KUAN2021-02-262021-02-262019https://www.scopus.com/inward/record.url?eid=2-s2.0-85067859682&partnerID=40&md5=7b16c2986ecaccac843c63e7152e87eahttps://scholars.lib.ntu.edu.tw/handle/123456789/549877[SDGs]SDG7[SDGs]SDG9Reduction of threading dislocation by using pattern sapphire substrate on GaN to enhance Schottky diodeˇ¦s performanceconference paper10.1145/3324033.33240382-s2.0-85067859682