Modified growth of Ge quantum dots using C<inf>2</inf>H<inf>4</inf> mediation by ultra-high vacuum chemical vapor deposition

CHEE-WEE LIULee, S.W.S.W.LeeChen, P.S.P.S.ChenCheng, S.L.S.L.ChengLee, M.H.M.H.LeeChang, H.T.H.T.ChangLee, C.-H.C.-H.LeeCHEE-WEE LIU2018-09-102018-09-102008http://www.scopus.com/inward/record.url?eid=2-s2.0-45049083912&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/341149Modified growth of Ge quantum dots using C<inf>2</inf>H<inf>4</inf> mediation by ultra-high vacuum chemical vapor depositionjournal article10.1016/j.apsusc.2008.02.192