蔡定平臺灣大學：物理研究所蔡志宏Tsai, Chih-HungChih-HungTsai2007-11-262018-06-282007-11-262018-06-282004http://ntur.lib.ntu.edu.tw//handle/246246/54469高功率半導體雷射在釵h的應用中極為重要。因此，本篇論文的目的，主要在於探討高功率半導體雷射之設計與測量，我們在半導體雷射之設計上採用寬面積傾斜波導，設計發光波長在1.3μm及1.55μm的元件。在光輸出功率上，此元件可以達到瓦級的高功率，亦能有好的光場形。在波導的設計上，我們將波導設計成7°的傾斜，雖然波導的設計是傾斜的，但是當元件產生雷射光時，光束並非沿波導傾斜方向，而是以垂直鏡面方向發出。 在實驗方面，我們測量了這些元件的基本特性，包括：輸出功率對注入電流曲線、頻譜、近場以及遠場四種測量。此外，我們亦對元件架設外部共振腔，以提高元件的輸出必v。外部共振腔的架設是以光柵來提供光的反射，並測量經外部共振後，元件的特性改變情形，包括：光功率、頻譜、近場以及遠場。我們亦用光柵來調變光的輸出波段，元件的可調頻寬可從1275 nm至1310 nm，達35 nm。在光的場形上，遠場的角度可達到繞射極限的角度。High power and good beam quality are desired for semiconductor lasers in many applications such as spectroscopy, device and material characterization, laser and amplifier pumping, and nonlinear wavelength conversion. We propose a new type of broad area laser diodes that is capable of emitting good beam quality, high power and broadband tuning. The new type of laser diodes is fabricated with a broad-area waveguide that is oriented at an angle from the facet normal. This device does not require the DFB structure, so the fabrication is much simpler. The L-I curves, spectra, near-field patterns and far-field patterns of the angled broad-area waveguide laser diode are measured. The direction of the far field pattern along the facet normal for the device operated above the threshold current indicates that the light path is not along the waveguide direction. With external cavity by grating, the laser diode is tunable from 1275nm to 1310nm with output power up to 1 watt at 6Amp. The beam quality is good and the near field is avoid of filamentation.Contents Chapter 1 Introduction 1.1 A Brief Review 1 1.2 Motivation 4 1.3 Overview of the Thesis 6 Chapter 2 Fabrication and Experimental Setups 2.1 Device structure 10 2.1.1 Geometrical Structure 11 2.1.2 Layer Structure 12 2.2 Device Fabrication 15 2.3 Experimental Setups 18 2.3.1 L-I Curve Measurement 19 2.3.2 Spectrum Measurement 21 2.3.3 Near Field and Far Field measurement 22 Chapter 3 High-power angled broad-area 1.3μm laser diodes with good beam quality 3.1 Introduction 27 3.2 Measurement and Result 29 3.3 Discussion 39 3.4 100μm width angled waveguide devices 42 3.5 Modified angled waveguide devices 47 3.6 Conclusion 51 Chapter 4 High-power angled broad-area 1.55μm laser diodes with good beam quality 4.1 Introduction 55 4.2 Fabrication 56 4.3 Experimental setup and result 57 4.4 Modified angled waveguide devices 62 4.5 Conclusion 67 Chapter 5 High power tunable semiconductor laser with angled broad-area waveguide 5.1 Introduction 71 5.2 Experimental setup and Result 73 5.3 External cavity of the 100μm wide angled waveguide device 83 5.4 External cavity of the modified angled broad-area semiconductor lasers 86 5.5 External cavity of the 1.55μm wavelength semiconductor lasers 91 5.6 Conclusion 95 Chapter 6 Conclusion 1001629447 bytesapplication/pdfen-US可調高功率半導體雷射semiconductor lasersHigh-powertunablethesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/54469/1/ntu-93-R90222020-1.pdf