Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs

MINGHWEI HONGRen, FFRenHobson, WSWSHobsonKuo, JMJMKuoKwo, JJKwoMannaerts, JPJPMannaertsLothian, JRJRLothianMarcus, MAMAMarcusLiu, CTCTLiuSergent, AMAMSergentothers2018-09-102018-09-101997http://scholars.lib.ntu.edu.tw/handle/123456789/331391Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETsconference paper