Dept. of Electr. Eng., National Taiwan Univ.Huang, C.-H.C.-H.HuangLee, T.-L.T.-L.LeeLin, H.-H.H.-H.Lin2007-04-192018-07-062007-04-192018-07-061993-04http://ntur.lib.ntu.edu.tw//handle/246246/2007041910032371application/pdf312525 bytesapplication/pdfen-USDC characteristics of In0.52Al0.48As/ In0.53(AxGa1-x)0.47As NPN double heterojunction bipolar transistorsjournal article10.1109/ICIPRM.1993.380589http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910032371/1/00380589.pdf