W.-S. LourM.-K. TsaiK.-C. ChenY.-W. WuS.-W. TanYING-JAY YANG2018-09-102018-09-102001-1002681242http://scholars.lib.ntu.edu.tw/handle/123456789/294641https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035481052&doi=10.1088%2f0268-1242%2f16%2f10%2f303&partnerID=40&md5=9291855194b500a97aab8d8c524e51fbIn0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors (PHEMTs) fabricated using single- and dual-gate methodologies have been characterized with special emphasis on precisely controlling the device linearity and the gate-voltage swing. A composite channel employing a GaAs delta-doped (δ(n+)) sheet and an undoped In0.2Ga0.8As layer characterizes the key features of the proposed PHEMT profile. Better carrier confinement for both the electron and the hole due to the InGaP/InGaAs hetero-interface and superior carrier transport properties at the channel/buffer interface, together with the redistributed carrier profile, contribute to high-linearity performances. On the other hand, high etching selectivity between the GaAs cap and the InGaP Schottky layers makes it possible to precisely position both of the gates. The gate-voltage dependence of transconductance for the first equivalent gate with several VGS2 shows that the available gate-voltage swing is in the range 0-4.0 V.Electric potential; Electron mobility; Semiconducting gallium arsenide; Semiconducting indium compounds; Transconductance; Pseudomorphic high electron mobility transistors (PHEMT); Gates (transistor)journal article10.1088/0268-1242/16/10/3032-s2.0-0035481052WOS:000171559600007