BTI Characterization of MBE Si-Capped Ge Gate Stack and Defect Reduction via Forming Gas Annealing

Wan, H.W.H.W.WanHong, Y.J.Y.J.HongCheng, Y.T.Y.T.ChengMINGHWEI HONG2021-07-282021-07-282019https://www.scopus.com/inward/record.url?eid=2-s2.0-85065340453&partnerID=40&md5=903909b4ca96204792dddd62bd799946https://scholars.lib.ntu.edu.tw/handle/123456789/573740BTI Characterization of MBE Si-Capped Ge Gate Stack and Defect Reduction via Forming Gas Annealingconference paper10.1109/IRPS.2019.87205672-s2.0-85065340453