The effects of shower head orientation and substrate position on the uniformity of GaN growth in a HVPE reactor

Lan, W.C.W.C.LanTsai, C.D.C.D.TsaiCHUNG-WEN LAN2020-01-062020-01-062009https://scholars.lib.ntu.edu.tw/handle/123456789/444898The effects of shower head orientation and substrate position on the uniformity of GaN growth in a HVPE reactorjournal article10.1016/j.jtice.2008.12.0082-s2.0-67349135764https://www.scopus.com/inward/record.uri?eid=2-s2.0-67349135764&doi=10.1016%2fj.jtice.2008.12.008&partnerID=40&md5=ec0a08856fa58cc0b34613b3c6690c44