Huang B.-W.JIAN-ZHANG CHENI-CHUN CHENG2019-09-262019-09-26201400406090https://www.scopus.com/inward/record.uri?eid=2-s2.0-84890309892&doi=10.1016%2fj.tsf.2013.11.086&partnerID=40&md5=7f89a32a550aa6dff435257ddf2024b4The influence of annealing temperature on the characteristics of rf-sputtered CuAlOx:Ca thin films is studied. Room-temperature sputter-deposited CuAlOx:Ca thin films show an amorphous/ nanocrystalline phase with p-type conductivity, as evidenced by Hall measurements and Seebeck coefficient measurements. This film becomes slightly crystalline after annealing at 600 C for 5 h in N2 atmosphere. As the annealing temperature is increased to 900 C, crystalline CuAlO2 mixed with CuO and CaAl4O7 are formed in the film; these precipitates extrude and roughen the surface. ZnO:Al/CuAlOx:Ca diodes fabricated using CuAlOx:Ca films that are as-deposited or annealed at 600 C show good rectification characteristics, whereas those fabricated using CuAlOx:Ca films annealed at 900 C show poor diode performance owing to the rugged surface that leads to the poor interface and current leakage paths. ? 2013 Elsevier B.V.Annealing temperatureCalcium-doped copper aluminum oxideCopper aluminum oxideHeterojunction diodesSputteringjournal article10.1016/j.tsf.2013.11.0862-s2.0-84890309892WOS:000328499700091