Wang C.H.Liao, WSWSLiaoZONG-HONG LINKu, NJNJKuLi, YCYCLiCHEN, Y. C.Y. C.CHENWang, ZLZLWangLiu, CPCPLiu2023-03-162023-03-1620141614-6832https://scholars.lib.ntu.edu.tw/handle/123456789/629308Carrier concentration in a piezoelectric semiconductor greatly affects alternating current (AC) piezoelectric nanogenerators (NGs) because of the carrier screening effect on the piezoelectric potential. The output performance of a series of NGs is investigated by tuning the Si dopant concentration in GaN nanowires. The results show a strong carrier screening effect that degrades output performance for high doping concentrations but results in high output power for low doping concentrations.PERFORMANCE; GENERATION; BARRIER; LIGHT; ARRAY[SDGs]SDG7journal article10.1002/aenm.2014003922-s2.0-84911373495WOS:000345314800003https://api.elsevier.com/content/abstract/scopus_id/84911373495