Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs

Liao, M.-H.M.-H.LiaoChen, Chih HuaChih HuaChenChang, Li ChengLi ChengChangYang, ChenChenYangKao, Ssu ChiehSsu ChiehKaoLiao, M.-H.M.-H.Liao2012-10-312018-06-282012-10-312018-06-282012http://ntur.lib.ntu.edu.tw//handle/246246/243963en-USAdditional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETsjournal article10.1109/TED.2012.2198824http://ntur.lib.ntu.edu.tw/bitstream/246246/243963/-1/index.html