YANG-FANG CHENLai, K. Y.K. Y.LaiLin, G. J.G. J.LinLai, Y.-L.Y.-L.LaiChen, Y. F.Y. F.ChenHe, J. H.J. H.He2018-09-102018-09-102010http://www.scopus.com/inward/record.url?eid=2-s2.0-77749246078&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/355745Severe In fluctuation was observed in In0.3Ga0.7N/GaN multiple quantum well solar cells using scanning transmission electron microscopy and energy dispersive x-ray spectroscopy. The high In content and fluctuation lead to low fill factor (FF) of 30% and energy conversion efficiency (η) of 0.48% under the illumination of AM 1.5G. As the temperature was increased from 250 to 300 K, FF and were substantially enhanced. This strong temperature-dependent enhancement is attributed to the additional contribution to the photocurrents by the thermally activated carriers, which are originally trapped in the shallow quantum wells resulting from the inhomogeneous In distribution. © 2010 American Institute of Physics.[SDGs]SDG7Energy dispersive X ray spectroscopy; Fill factor; InGaN/GaN; Multiple quantum wells; Photovoltaic characteristics; Quantum well; Scanning transmission electron microscopy; Temperature dependent; Thermally activated; Conversion efficiency; Energy conversion; Gallium; Scanning electron microscopy; Solar cells; Solar energy; Solar power generation; Transmission electron microscopy; X ray spectroscopy; Semiconductor quantum wellsjournal article10.1063/1.33273312-s2.0-77749246078WOS:000275027200003