Lanzerotti, L.D.L.D.LanzerottiSt. Amour, A.A.St. AmourLiu, C.W.C.W.LiuSturm, J.C.J.C.SturmWatanabe, J.K.J.K.WatanabeTheodore, N.D.N.D.TheodoreCHEE-WEE LIU2020-06-162020-06-161996https://scholars.lib.ntu.edu.tw/handle/123456789/502106We report the first Si/Si/sub 1-x-y/Ge/sub x/C/sub y//Si n-p-n heterojunction bipolar transistors and the first electrical bandgap measurements of strained Si/sub 1-x-y/Ge/sub x/C/sub y/ on Si (100) substrates. The carbon compositions were measured by the shift between the Si/sub 1-x-y/Ge/sub x/C/sub y/ and Si/sub 1-x/Ge/sub x/ X-ray diffraction peaks. The temperature dependence of the HBT collector current demonstrates that carbon causes a shift in bandgap of +26 meV/%C for germanium fractions of x=0.2 and x=0.25. These results show that carbon reduces the strain in Si/sub 1-x/Ge/sub x/ at a faster rate than it increases the bandgap (compared to reducing x in Si/sub 1-x/Ge/sub x/), so that a Si/sub 1-x-y/Ge/sub x/C/sub y/ film will have less strain than a Si/sub 1-x/Ge/sub x/ film with the same bandgap.journal article10.1109/55.5063592-s2.0-0030181659https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030181659&doi=10.1109%2f55.506359&partnerID=40&md5=4a10d003fb95386a769ac098cad8b39f