C. S. LeeF. Y. ChangD. S. LiuHAO-HSIUNG LIN2018-09-102018-09-102006-08https://www.scopus.com/inward/record.uri?eid=2-s2.0-33748580714&doi=10.1143%2fJJAP.45.6271&partnerID=40&md5=7363faf2bd77e56d10c3e4078e40d085We report a coupled quantum dot (QD) structure for long wavelength laser applications. The structure comprises an InAs seed layer and a second InAs QD layer capped with an In0.33Ga0.67As capping layer. Cross-sectional transmission electron microscopy (TEM) images show a vertical alignment between the QD stacks, which causes the coupled QD sample to have a larger dot size and a lower dot density than the control sample. The laser with the coupled QD structure exhibits a markedly longer emission wavelength and a slightly higher threshold current density than lasers with a conventional QD structure. indicating that the coupled QD structure has potential for long wavelength applications. © 2006 The Japan Society of Applied Physics.Coupled quantum dot; Molecular beam epitaxy; Quantum dot; Quantum dot laserLasers; Layered manufacturing; Semiconducting indium; Semiconductor quantum dots; Transmission electron microscopy; Dot size; Vertical alignment; Wavelength laser; Semiconducting gallium arsenidejournal article10.1143/JJAP.45.62712-s2.0-33748580714WOS:000240512800042