Yeh, Po-ChunPo-ChunYehTu, Po-TsungPo-TsungTuLiu, Hsueh-HsingHsueh-HsingLiuHsu, Chien-HuaChien-HuaHsuYang, Hsin-YunHsin-YunYangFu, Yi-KengYi-KengFuLee, Li-HengLi-HengLeeTzeng, Pei-JerPei-JerTzengYUH-RENN WUSheu, Shyh-ShyuanShyh-ShyuanSheuLo, Wei-ChungWei-ChungLoWu, Chih-IChih-IWu2021-09-022021-09-022021https://www.scopus.com/inward/record.uri?eid=2-s2.0-85108165120&doi=10.1109%2fVLSI-TSA51926.2021.9440075&partnerID=40&md5=0e1110583b3f1d3c637d4a7fdf25d509https://scholars.lib.ntu.edu.tw/handle/123456789/581272In this work, we successfully fabricated AlGaN/GaN HEMT on 8-inch GaN-on-Si wafer utilizing CMOS BEOL compatible process, and demonstrate an AlGaN/GaN HEMT with Lg = 250nm reaching ft/fmax = 50/44 GHz. By semi-automatic RF measurements mapping in complete 8-inch wafer area, results exhibit average ft = 48GHz with NU = 7.6% and average fmax = 42GHz with NU = 5%, revealing the outstanding uniformity of 8-inch standard CMOS manufacturing tools. ? 2021 IEEE.Aluminum gallium nitride; CMOS integrated circuits; Gallium nitride; III-V semiconductors; Silicon compounds; Silicon wafers; VLSI circuits; AlGaN/GaN HEMTs; CMOS Compatible; Compatible process; RF applications; RF measurements; Semi-automatics; Si substrates; Standard CMOS; High electron mobility transistors[SDGs]SDG9conference paper10.1109/VLSI-TSA51926.2021.94400752-s2.0-85108165120