Effective passivation of p- and n-type In0.53Ga0.47As in achieving low leakage current, low interfacial traps, and low border traps

Y. H. G. LinH. W. WanL. B. YoungK. H. LaiJ. LiuY. T. ChengJ. KwoMINGHWEI HONG2024-10-232024-10-232024-01-04https://scholars.lib.ntu.edu.tw/handle/123456789/722328Effective passivation of p- and n-type In0.53Ga0.47As in achieving low leakage current, low interfacial traps, and low border trapsjournal article10.1063/5.0174575