Chang-Liao, Kuei-ShuKuei-ShuChang-LiaoJENN-GWO HWU2018-09-102018-09-101992https://www.scopus.com/inward/record.uri?eid=2-s2.0-0026868251&doi=10.1143%2fJJAP.31.L600&partnerID=40&md5=8cfb803452c2acfde16289ef9356446fhttp://scholars.lib.ntu.edu.tw/handle/123456789/296942The electrical characteristics of metal-reoxidized nitrided oxide (RNO)-semiconductor devices which employ furnace oxide (OF) and rapid thermal oxide (OR) as starting oxides are investigated. It is found that the RNO structure which uses OF as a starting oxide and with nitridation carried out at a sufficiently high temperature, exhibits the lowest initial interface traps in comparison with other RNO structures. Metal-oxide-semiconductor (MOS) devices which use pure OR as a gate oxide are worthy of note due to their good hot-electron and radiation hardnesses. The gate-area dependence of radiation hardness for various structures is also discussed. © 1992 IOP Publishing Ltd.Rapid thermal process; Reoxidized nitrided oxideOxides - Applications; Oxides - Interfaces; Oxides - Thermal Effects; Rapid Thermal Process; Reoxidized Nitrided Oxide; Semiconductor Devicesjournal article10.1143/JJAP.31.L6002-s2.0-0026868251