Lee, P.-H.P.-H.LeeLi, B.-T.B.-T.LiLee, C.-F.C.-F.LeeHuang, Z.-H.Z.-H.HuangHuang, Y.-C.Y.-C.HuangSu, W.-F.W.-F.SuWEI-FANG SU2021-02-042021-02-042020https://www.scopus.com/inward/record.url?eid=2-s2.0-85076861144&partnerID=40&md5=b0c9827c48b38ad4d38809e706e0ff83https://scholars.lib.ntu.edu.tw/handle/123456789/546740Lead halide perovskite solar cells (PVSCs) have potential toward commercialization because of their high efficiency and low cost. The hole transport layer (HTL) of p-i-n perovskite solar cell is usually made of NiOX. However, the NiOX needs to be processed at 300 °C for 15 min for good hole transport property. This long heating time prohibits the development of continuous commercial process. Thus, a rapid heating process for the NiOX film deposition is critical to realize the commercialization of PVSCs in the future. In this study, we develop a facile method to obtain high quality NiOX films annealed by NIR in a short time of 50 s. A short-wave NIR lamp at 2500 K was used to systematically investigate the effect of NIR intensity on the film quality of sol-gel NiOX. The PVSCs fabricated from NIR-annealed NiOX (NIR-NiOX) film show a comparable power conversion efficiency (PCE) to those fabricated from traditional hot-plate annealed-NiOX (HP-NiOX). In addition, the NIR annealed cobalt-doped NiOX (NIR-Co:NiOX) was synthesized to replace pristine NIR-NiOX. The PCE of PVSCs fabricated from this new NiOX film can be increased from 15.99% to 17.77%, which is due to the efficient hole extraction, less charge accumulation, and reducing Voc loss resulting from the improved hole mobility, reduced interface resistance and well-matched work function. Our study paves a way to fulfill the requirements of low cost and low energy consumption of large scale production of high efficiency PVSCs. © 2019 Elsevier B.V.Cobalt doped nickel oxide; Hole transport layer; Interface engineering; Near infrared radiation; Perovskite solar cell; Rapid thermal annealing[SDGs]SDG7Cell engineering; Cobalt compounds; Costs; Energy utilization; Fabrication; Hole mobility; Infrared devices; Infrared radiation; Lead compounds; Nickel oxide; Perovskite; Rapid thermal annealing; Sol-gels; Thermal Engineering; Hole transport layers; Interface engineering; Interface resistance; Large scale productions; Low energy consumption; Near-infrared radiations; Power conversion efficiencies; Rapid heating process; Perovskite solar cellsjournal article10.1016/j.solmat.2019.1103522-s2.0-85076861144WOS:000517659900004