Device scaling physics and channel velocities in AlGaN/GaN HFETs: Velocities and effective gate length

YUH-RENN WUSingh, MMSinghSingh, JJSingh2018-09-102018-09-102006http://scholars.lib.ntu.edu.tw/handle/123456789/321642[SDGs]SDG7Device scaling physics and channel velocities in AlGaN/GaN HFETs: Velocities and effective gate lengthjournal article10.1109/TED.2006.870571