Lin, Ching-FuhChing-FuhLinWu, Bing-RueyBing-RueyWuLaih, Lih-WenLih-WenLaih2006-11-152018-07-102006-11-152018-07-102003/4/1400214922http://ntur.lib.ntu.edu.tw//handle/246246/200611150121963http://ntur.lib.ntu.edu.tw/bitstream/246246/200611150121963/1/6378.pdfhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0344925605&doi=10.1143%2fjjap.42.5557&partnerID=40&md5=2cb1ff08613983c7d8cf37e6ab8b4389Experiments on laser diodes and superluminescent diodes with nonidentical InGaAsP multiple quantum wells (MQWs) show that quantum wells near the n-cladding layer could accumulate more carriers than those near the p-cladding layer, indicating that nonuniform carrier distribution is determined by electrons instead of holes. The electron-determined behavior is attributed to the thick separate-confinement heterostructure layer. This contrary observation to hole-determined nonuniform carrier distribution implies that carrier distribution among the MQWs could be engineered for desired purposes.application/pdf65597 bytesapplication/pdfzh-TWlaser diodessuperluminescent diodesmultiple quantum wellsnonuniform carrier distributionseparate-confinement heterostructure layerjournal article2-s2.0-0344925605http://ntur.lib.ntu.edu.tw/bitstream/246246/200611150121963/1/6378.pdf